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ON Semiconductor

64-1329-89　FDD7N25LZTM N-Channel MOSFET, 6.2 A, 250 V UniFET, 3-Pin DPAK ON Semiconductor　FDD7N25LZTM

Features

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

Spec

  • Quantity:1set(2500pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:6.2 A
  • Maximum Drain Source Voltage:250 V
  • Maximum Drain Source Resistance:570 mΩ
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:56 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:166-3420
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Order No. 64-1329-89
Model No. FDD7N25LZTM
Standard price JPY: 197,000 USD: 1,234.88
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(2500pieces)
Stock in Japan
Supplier Stock

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