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ON Semiconductor

64-1329-70　［Discontinued］FDB12N50TM N-Channel MOSFET, 11.5 A, 500 V UniFET, 3-Pin D2PAK ON Semiconductor　FDB12N50TM

Features

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:11.5 A
  • Maximum Drain Source Voltage:500 V
  • Maximum Drain Source Resistance:650 mΩ
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:165 W
  • Maximum Operating Temperature:+150 °C
  • CODE No.:809-0815
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Order No. 64-1329-70
Model No. FDB12N50TM
Standard price JPY: 1,080 USD: 6.77
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -

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