64-1329-62 [Discontinued]FDB029N06 N-Channel MOSFET, 120 A, 193 A, 60 V PowerTrench, 3-Pin D2PAK ON Semiconductor FDB029N06
Features
- PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
Spec
- Quantity:1set(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:120 A, 193 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:3.1 mΩ
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:231 W
- Number of Elements per Chip:1
- CODE No.:166-3598
| Order No. | 64-1329-62 | |
|---|---|---|
| Model No. | FDB029N06 | |
| Standard price |
JPY: 300,000
USD: 1,880.52
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(800pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDB029N06 N-Channel MOSFET, 120 A, 193 A, 60 V PowerTrench, 3-Pin D2PAK ON Semiconductor FDB029N06](https://aimg.as-1.co.jp/c/64/1329/62/64132962.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)