ON Semiconductor

64-1329-48　［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD5P10TM

特徴

QFET® P-Channel MOSFET, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

Quantity:1bag(10pieces)
Channel Type:P
Maximum Continuous Drain Current:2.3 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:1.05 Ω
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:25 W
Number of Elements per Chip:1
CODE No.:808-9023

Order No. 64-1329-48

Model No. FQD5P10TM

Standard priceStandard pricess="init"> ［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD5P10TM 64-1329-48 【AXEL GLOBAL】 アズワン

取扱点数300万点

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ON Semiconductor

64-1329-48　［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD5P10TM

印刷

特徴

QFET® P-Channel MOSFET, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(10pieces)
Channel Type:P
Maximum Continuous Drain Current:2.3 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:1.05 Ω
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:25 W
Number of Elements per Chip:1
CODE No.:808-9023

アズワン品番	64-1329-48
型番	FQD5P10TM
標準価格	JPY: 640 USD: 3.98 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1bag(10pieces)

Stock in Japan	-

This page is the page of ［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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For Re-seller

For End-UserUser’s Guide"> ［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD5P10TM 64-1329-48 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

ON Semiconductor

64-1329-48　［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD5P10TM

印刷

特徴

QFET® P-Channel MOSFET, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(10pieces)
Channel Type:P
Maximum Continuous Drain Current:2.3 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:1.05 Ω
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:25 W
Number of Elements per Chip:1
CODE No.:808-9023

アズワン品番	64-1329-48
型番	FQD5P10TM
標準価格	JPY: 640 USD: 3.98 Excange rate 1USD= 160.72JPY Valid price in Japan
入り数	1bag(10pieces)

在庫数	-

[$1]［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor[/$1]

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About usAbout usinit"> ［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD5P10TM 64-1329-48 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

ON Semiconductor

64-1329-48　［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD5P10TM

印刷

特徴

QFET® P-Channel MOSFET, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(10pieces)
Channel Type:P
Maximum Continuous Drain Current:2.3 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:1.05 Ω
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:25 W
Number of Elements per Chip:1
CODE No.:808-9023

アズワン品番	64-1329-48
型番	FQD5P10TM
標準価格	JPY: 640 USD: 3.98 Excange rate 1USD= 160.72JPY Valid price in Japan
入り数	1bag(10pieces)

在庫数	-

[$1]［Discontinued］FQD5P10TM P-Channel MOSFET, 2.3 A, 100 V QFET, 3-Pin DPAK ON Semiconductor[/$1]