64-1329-46 [Discontinued]FQD5N60CTM N-Channel MOSFET, 2.8 A, 600 V QFET, 3-Pin DPAK ON Semiconductor FQD5N60CTM
特徴
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.8 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:2.5 Ω
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:49 W
- Number of Elements per Chip:1
- CODE No.:808-9014
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64-1329-46 [Discontinued]FQD5N60CTM N-Channel MOSFET, 2.8 A, 600 V QFET, 3-Pin DPAK ON Semiconductor FQD5N60CTM特徴
仕様
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