64-1329-44 FQD3P50TM P-Channel MOSFET, 1.33 A, 500 V QFET, 3-Pin DPAK ON Semiconductor FQD3P50TM
Features
- QFET® P-Channel MOSFET, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(10pieces)
- Channel Type:P
- Maximum Continuous Drain Current:1.33 A
- Maximum Drain Source Voltage:500 V
- Maximum Drain Source Resistance:4.9 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:50 W
- Transistor Material:Si
- CODE No.:808-9010
Package size:80×140×10 mm 10 g [About Package size]
| Order No. | 64-1329-44 | |
|---|---|---|
| Model No. | FQD3P50TM | |
| Standard price |
JPY: 2,470
USD: 15.48
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|
