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64-1329-42　［Discontinued］FQD12N20TM N-Channel MOSFET, 9 A, 200 V QFET, 3-Pin DPAK ON Semiconductor　FQD12N20TM

Features

  • QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1set(2500pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:9 A
  • Maximum Drain Source Voltage:200 V
  • Maximum Drain Source Resistance:280 mΩ
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:55 W
  • Typical Turn-On Delay Time:13 ns
  • CODE No.:166-3700
  •  
Order No. 64-1329-42
Model No. FQD12N20TM
Standard price JPY: 151,830 USD: 951.73
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(2500pieces)
  Discontinued
Stock in Japan -

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