64-1329-40 ［Discontinued］FQB7N60TM N-Channel MOSFET, 7.4 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB7N60TM
Features
- QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1set(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:7.4 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:3.6 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:142 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-2213
| Order No. | 64-1329-40 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Model No. | FQB7N60TM | |||||||||||||||
| Standard price |
JPY: 110,000
USD: 684.42
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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64-1329-40 ［Discontinued］FQB7N60TM N-Channel MOSFET, 7.4 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB7N60TM特徴
仕様
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