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64-1326-17　HUF76423P3 N-Channel MOSFET, 33 A, 60 V UltraFET, 3-Pin TO-220AB ON Semiconductor　HUF76423P3

FeaturesFeatures class="init"> 64-1326-17 HUF76423P3 N-Channel MOSFET, 33 A, 60 V UltraFET, 3-Pin TO-220AB ON Semiconductor　HUF76423P3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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64-1326-17　HUF76423P3 N-Channel MOSFET, 33 A, 60 V UltraFET, 3-Pin TO-220AB ON Semiconductor　HUF76423P3

特徴

  • UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

Spec

  • Quantity:1bag(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:33 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:38 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-16 V, +16 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:85 W
  • Typical Turn-Off Delay Time:32 ns
  • CODE No.:807-8714
  •  
Order No. 64-1326-17
型番 HUF76423P3
Standard priceStandard pricess="init"> 64-1326-17 HUF76423P3 N-Channel MOSFET, 33 A, 60 V UltraFET, 3-Pin TO-220AB ON Semiconductor　HUF76423P3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
ON Semiconductor

64-1326-17　HUF76423P3 N-Channel MOSFET, 33 A, 60 V UltraFET, 3-Pin TO-220AB ON Semiconductor　HUF76423P3

特徴

  • UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

仕様

  • Quantity:1bag(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:33 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:38 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-16 V, +16 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:85 W
  • Typical Turn-Off Delay Time:32 ns
  • CODE No.:807-8714
  •  
アズワン品番 64-1326-17
型番 HUF76423P3
標準価格 JPY: 2,080 USD: 13.05
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1bag(10pieces)
Stock in Japan
Supplier Stock

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