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ON Semiconductor

64-1326-15　IRL640A N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 ON Semiconductor　IRL640A

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:18 A
  • Maximum Drain Source Voltage:200 V
  • Maximum Drain Source Resistance:180 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:110 W
  • Width:4.7mm
  • CODE No.:807-8711
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Order No. 64-1326-15
Model No. IRL640A
Standard price JPY: 2,560 USD: 15.93
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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