64-1326-14 [Discontinued]IRL640A N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 ON Semiconductor IRL640A
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:18 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:180 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:110 W
- Typical Turn-Off Delay Time:46 ns
- CODE No.:145-5670
| Order No. | 64-1326-14 | |
|---|---|---|
| Model No. | IRL640A | |
| Standard price |
JPY: 16,000
USD: 100.36
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRL640A N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 ON Semiconductor IRL640A](https://aimg.as-1.co.jp/c/64/1326/14/64132614.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)