64-1326-12 HUF75645P3 N-Channel MOSFET, 75 A, 80 V UltraFET, 3-Pin TO-220AB ON Semiconductor HUF75645P3
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64-1326-12 HUF75645P3 N-Channel MOSFET, 75 A, 80 V UltraFET, 3-Pin TO-220AB ON Semiconductor HUF75645P3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
ON Semiconductor 64-1326-12 HUF75645P3 N-Channel MOSFET, 75 A, 80 V UltraFET, 3-Pin TO-220AB ON Semiconductor HUF75645P3
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64-1326-12 HUF75645P3 N-Channel MOSFET, 75 A, 80 V UltraFET, 3-Pin TO-220AB ON Semiconductor HUF75645P3 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
ON Semiconductor 64-1326-12 HUF75645P3 N-Channel MOSFET, 75 A, 80 V UltraFET, 3-Pin TO-220AB ON Semiconductor HUF75645P3
Features
- UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:75 A
- Maximum Drain Source Voltage:80 V
- Maximum Drain Source Resistance:10 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220AB
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:270 W
- Number of Elements per Chip:1
- CODE No.:145-5463
Order No. 64-1326-12 Model No. HUF75645P3 Standard price JPY: 16,800 USD: 104.53 Excange rate 1USD= 160.72JPY
Valid price in JapanQuantity 1set(50pieces) Stock in Japan 
Supplier Stock
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