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• 64-1325-77 ［Discontinued］FQPF6N80T N-Channel MOSFET, 3.3 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor　FQPF6N80T

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• 64-1325-77 ［Discontinued］FQPF6N80T N-Channel MOSFET, 3.3 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor　FQPF6N80T

ON Semiconductor

64-1325-77　［Discontinued］FQPF6N80T N-Channel MOSFET, 3.3 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor　FQPF6N80T

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特徴

• QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

• Quantity:1bag(5pieces)
• Channel Type:N
• Maximum Continuous Drain Current:3.3 A
• Maximum Drain Source Voltage:800 V
• Maximum Drain Source Resistance:1.95 Ω
• Minimum Gate Threshold Voltage:3V
• Maximum Gate Source Voltage:-30 V, +30 V
• Package Type:TO-220F
• Mounting Type:Through Hole
• Pin Count:3
• Channel Mode:Enhancement
• Category:Power MOSFET
• Maximum Power Dissipation:51 W
• Dimensions:10.36 x 4.9 x 16.07mm
• CODE No.:807-5917
•  

Order No.	64-1325-77
Model No.	FQPF6N80T
Standard price	JPY: 1,380 USD: 8.66 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1bag(5pieces)
在庫数	-

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