64-1325-77 ［Discontinued］FQPF6N80T N-Channel MOSFET, 3.3 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor FQPF6N80T
Features
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.3 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:1.95 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-220F
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:51 W
- Dimensions:10.36 x 4.9 x 16.07mm
- CODE No.:807-5917
| Order No. | 64-1325-77 | |
|---|---|---|
| Model No. | FQPF6N80T | |
| Standard price |
JPY: 1,380
USD: 8.66
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |