64-1323-61 ［Discontinued］FDY1002PZ Dual P-Channel MOSFET, 830 mA, 20 V PowerTrench, 6-Pin SOT-523 ON Semiconductor FDY1002PZ
FeaturesFeatures class="init">
［Discontinued］FDY1002PZ Dual P-Channel MOSFET, 830 mA, 20 V PowerTrench, 6-Pin SOT-523 ON Semiconductor FDY1002PZ 64-1323-61 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
ON Semiconductor
64-1323-61 ［Discontinued］FDY1002PZ Dual P-Channel MOSFET, 830 mA, 20 V PowerTrench, 6-Pin SOT-523 ON Semiconductor FDY1002PZ
-
Features
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity:1bag(25pieces)
- Channel Type:P
- Maximum Continuous Drain Current:830 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:1.8 Ω
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-523 (SC-89)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:625 mW
- Number of Elements per Chip:2
- CODE No.:807-0713
-
Order No.
64-1323-61
Model No.
FDY1002PZ
標準価格
JPY: 2,590
USD: 16.24
Excange rate 1USD= 159.53JPY
Valid price in Japan
入り数
1bag(25pieces)
![<!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->](/en/asone/img/usestop_en_US.png?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)
在庫数
-
64-1323-61 ［Discontinued］FDY1002PZ Dual P-Channel MOSFET, 830 mA, 20 V PowerTrench, 6-Pin SOT-523 ON Semiconductor FDY1002PZ
Features
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity:1bag(25pieces)
- Channel Type:P
- Maximum Continuous Drain Current:830 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:1.8 Ω
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-523 (SC-89)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:625 mW
- Number of Elements per Chip:2
- CODE No.:807-0713
| Order No. | 64-1323-61 | |
|---|---|---|
| Model No. | FDY1002PZ | |
| 標準価格 |
JPY: 2,590
USD: 16.24
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| 入り数 | 1bag(25pieces) | |
|
|
||
| 在庫数 | - | |