64-1318-46 [Discontinued]FDS6911 Dual N-Channel MOSFET, 7.5 A, 20 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS6911
Features
- PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity:1set(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:7.5 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:20 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Logic Level MOSFET
- Maximum Power Dissipation:1.6 W
- Typical Turn-On Delay Time:9 ns
- CODE No.:806-3661
| Order No. | 64-1318-46 | |
|---|---|---|
| Model No. | FDS6911 | |
| Standard price |
JPY: 860
USD: 5.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDS6911 Dual N-Channel MOSFET, 7.5 A, 20 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS6911](https://aimg.as-1.co.jp/c/64/1318/46/64131845.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)