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ON Semiconductor

64-1318-35　FDS3890 Dual N-Channel MOSFET, 4.7 A, 80 V PowerTrench, 8-Pin SOIC ON Semiconductor　FDS3890

Features

  • PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:4.7 A
  • Maximum Drain Source Voltage:80 V
  • Maximum Drain Source Resistance:82 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:1.6 W, 2 W
  • Number of Elements per Chip:2
  • CODE No.:806-3630
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Order No. 64-1318-35
Model No. FDS3890
Standard price JPY: 2,620 USD: 16.42
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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