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ON Semiconductor

64-1318-11　［Discontinued］FDP80N06 N-Channel MOSFET, 80 A, 60 V UniFET, 3-Pin TO-220 ON Semiconductor　FDP80N06

Features

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:80 A
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:10 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:176 W
  • Typical Gate Charge @ Vgs:57 nC @ 10 V
  • CODE No.:806-3576
  •  
Order No. 64-1318-11
Model No. FDP80N06
Standard price JPY: 1,160 USD: 7.22
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -

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