64-1311-29 [Discontinued]NVD5890NLT4G N-Channel MOSFET, 123 A, 40 V, 3-Pin DPAK ON Semiconductor NVD5890NLT4G
Features
- N-Channel Power MOSFET, 40V, ON Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:123 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:5.5 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:107 W
- Width:6.22mm
- CODE No.:805-4428
| Order No. | 64-1311-29 | |
|---|---|---|
| Model No. | NVD5890NLT4G | |
| Standard price |
JPY: 1,480
USD: 9.28
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]NVD5890NLT4G N-Channel MOSFET, 123 A, 40 V, 3-Pin DPAK ON Semiconductor NVD5890NLT4G](https://aimg.as-1.co.jp/c/64/1311/29/64131129.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)