64-1308-89 [Discontinued]2N7002W N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-323 ON Semiconductor 2N7002W
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1set(100pieces)
- Channel Type:N
- Maximum Continuous Drain Current:115 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:13.5 Ω
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-323 (SC-70)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:200 mW
- Number of Elements per Chip:1
- CODE No.:805-1144
| Order No. | 64-1308-89 | |
|---|---|---|
| Model No. | 2N7002W | |
| Standard price |
JPY: 1,340
USD: 8.40
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(100pieces) | |
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| Stock in Japan | - | |
![[Discontinued]2N7002W N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-323 ON Semiconductor 2N7002W](https://aimg.as-1.co.jp/c/64/1308/89/64130888.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)