64-1308-59 [Discontinued]IXFN132N50P3 N-Channel MOSFET, 112 A, 500 V HiperFET, Polar3, 4-Pin SOT-227B IXYS IXFN132N50P3
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:112 A
- Maximum Drain Source Voltage:500 V
- Maximum Drain Source Resistance:39 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SOT-227B
- Mounting Type:Panel Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.5 kW
- Minimum Operating Temperature:-55 °C
- CODE No.:168-4757
| Order No. | 64-1308-59 | |
|---|---|---|
| Model No. | IXFN132N50P3 | |
| Standard price |
JPY: 66,900
USD: 419.36
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IXFN132N50P3 N-Channel MOSFET, 112 A, 500 V HiperFET, Polar3, 4-Pin SOT-227B IXYS IXFN132N50P3](https://aimg.as-1.co.jp/c/64/1308/59/64130859.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)