64-1308-57 IXFN110N60P3 N-Channel MOSFET, 90 A, 600 V HiperFET, Polar3, 4-Pin SOT-227B IXYS IXFN110N60P3
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:90 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:56 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SOT-227B
- Mounting Type:Panel Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.5 kW
- Minimum Operating Temperature:-55 °C
- CODE No.:168-4756
| Order No. | 64-1308-57 | |
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| Model No. | IXFN110N60P3 | |
| Standard price |
JPY: 94,600
USD: 592.99
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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