64-1296-69 RFD3055LESM9A N-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK ON Semiconductor RFD3055LESM9A
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:11 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:107 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:38 W
- Length:6.73mm
- CODE No.:802-2159
| Order No. | 64-1296-69 | |
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| Model No. | RFD3055LESM9A | |
| Standard price |
JPY: 810
USD: 5.08
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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