64-1296-34 [Discontinued]MVGSF1N03LT1G N-Channel MOSFET, 2.1 A, 30 V, 3-Pin SOT-23 ON Semiconductor MVGSF1N03LT1G
Features
- N-Channel Power MOSFET, 30V, ON Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.1 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:145 mΩ
- Maximum Gate Threshold Voltage:2.4V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:690 mW
- Minimum Operating Temperature:-55 °C
- CODE No.:162-8966
| Order No. | 64-1296-34 | |
|---|---|---|
| Model No. | MVGSF1N03LT1G | |
| Standard price |
JPY: 180,000
USD: 1,128.31
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]MVGSF1N03LT1G N-Channel MOSFET, 2.1 A, 30 V, 3-Pin SOT-23 ON Semiconductor MVGSF1N03LT1G](https://aimg.as-1.co.jp/c/64/1296/34/64129634.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)