64-1290-40 IXFH18N100Q3 N-Channel MOSFET, 18 A, 1000 V HiperFET, Q3-Class, 3-Pin TO-247 IXYS IXFH18N100Q3
Features
- N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:18 A
- Maximum Drain Source Voltage:1000 V
- Maximum Drain Source Resistance:660 mΩ
- Maximum Gate Threshold Voltage:6.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:830 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-4698
| Order No. | 64-1290-40 | |
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| Model No. | IXFH18N100Q3 | |
| Standard price |
JPY: 77,900
USD: 488.31
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
| Stock in Japan |
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| Supplier Stock |
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