64-1280-10 PSMN2R6-40YS,115 N-Channel MOSFET, 100 A, 40 V, 4-Pin SOT-669 Nexperia PSMN2R6-40YS,115
FeaturesFeatures class="init">
64-1280-10 PSMN2R6-40YS,115 N-Channel MOSFET, 100 A, 40 V, 4-Pin SOT-669 Nexperia PSMN2R6-40YS,115 【AXEL GLOBAL】 アズワン
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Nexperia
64-1280-10 PSMN2R6-40YS,115 N-Channel MOSFET, 100 A, 40 V, 4-Pin SOT-669 Nexperia PSMN2R6-40YS,115
特徴
- N-Channel MOSFET, 40V to 55V
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3.7 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-669
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:131 W
- Number of Elements per Chip:1
- CODE No.:798-2937
-
Order No.
64-1280-10
Model No.ASONEs="init">
64-1280-10 PSMN2R6-40YS,115 N-Channel MOSFET, 100 A, 40 V, 4-Pin SOT-669 Nexperia PSMN2R6-40YS,115 【AXEL GLOBAL】 アズワン
Contact us
Nexperia
64-1280-10 PSMN2R6-40YS,115 N-Channel MOSFET, 100 A, 40 V, 4-Pin SOT-669 Nexperia PSMN2R6-40YS,115
Features
- N-Channel MOSFET, 40V to 55V
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3.7 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-669
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:131 W
- Number of Elements per Chip:1
- CODE No.:798-2937
-
Order No.
64-1280-10
Model No.
PSMN2R6-40YS,115
Standard price
JPY: 2,790
USD: 17.49
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity
1bag(5pieces)
Stock in Japan
Supplier Stock
64-1280-10 PSMN2R6-40YS,115 N-Channel MOSFET, 100 A, 40 V, 4-Pin SOT-669 Nexperia PSMN2R6-40YS,115
特徴
- N-Channel MOSFET, 40V to 55V
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3.7 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-669
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:131 W
- Number of Elements per Chip:1
- CODE No.:798-2937
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Model No.ASONEs="init">
64-1280-10 PSMN2R6-40YS,115 N-Channel MOSFET, 100 A, 40 V, 4-Pin SOT-669 Nexperia PSMN2R6-40YS,115Features
Spec
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