64-1272-67 [Discontinued]ON Semiconductor NGTB40N120IHRWG IGBT, 80 A 1200 V, 3-Pin TO-247 NGTB40N120IHRWG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1piece
- Maximum Continuous Collector Current:80 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:384 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.4mm
- Dimensions:16.25 x 5.3 x 21.4mm
- Maximum Operating Temperature:+175 °C
- CODE No.:796-1353
| Order No. | 64-1272-67 | |
|---|---|---|
| Model No. | NGTB40N120IHRWG | |
| Standard price |
JPY: 610
USD: 3.82
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]ON Semiconductor NGTB40N120IHRWG IGBT, 80 A 1200 V, 3-Pin TO-247 NGTB40N120IHRWG](https://aimg.as-1.co.jp/c/64/1272/67/64127266.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)