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ON Semiconductor

64-1272-61　［Discontinued］ON Semiconductor NGTB30N120IHRWG IGBT, 60 A 1200 V, 3-Pin TO-247　NGTB30N120IHRWG

Features

  • IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

Spec

  • Quantity:1set(30pieces)
  • Maximum Continuous Collector Current:60 A
  • Maximum Collector Emitter Voltage:1200 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:384 W
  • Package Type:TO-247
  • Mounting Type:Through Hole
  • Channel Type:N
  • Pin Count:3
  • Switching Speed:1MHz
  • Transistor Configuration:Single
  • Length:16.25mm
  • Width:5.3mm
  • Height:21.4mm
  • Dimensions:16.25 x 5.3 x 21.4mm
  • Minimum Operating Temperature:-40 °C
  • CODE No.:163-2257
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Order No. 64-1272-61
Model No. NGTB30N120IHRWG
Standard price JPY: 11,300 USD: 70.83
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(30pieces)
  Discontinued
Stock in Japan -

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