64-1257-95 [Discontinued]STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247 STGW80H65DFB
Features
- IGBT Discretes, STMicroelectronics
Spec
- Quantity:1set(30pieces)
- Maximum Continuous Collector Current:120 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:469 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:15.75mm
- Width:5.15mm
- Height:20.15mm
- Dimensions:15.75 x 5.15 x 20.15mm
- Minimum Operating Temperature:-55 °C
- CODE No.:168-7100
| Order No. | 64-1257-95 | |
|---|---|---|
| Model No. | STGW80H65DFB | |
| Standard price |
JPY: 35,500
USD: 222.53
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
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| Stock in Japan | - | |
![[Discontinued]STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247 STGW80H65DFB](https://aimg.as-1.co.jp/c/64/1257/95/64125795.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)