64-1257-86 STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247 STGW40H65DFB
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64-1257-86 STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247 STGW40H65DFB 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
STMicroelectronics 64-1257-86 STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247 STGW40H65DFB
特徴
- IGBT Discretes, STMicroelectronics
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:80 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:283 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:15.75mm
- Width:5.15mm
- Height:20.15mm
- Dimensions:15.75 x 5.15 x 20.15mm
- Minimum Operating Temperature:-55 °C
- CODE No.:792-5795
Order No.Order No.ss="init"> 64-1257-86 STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247 STGW40H65DFB 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
STMicroelectronics 64-1257-86 STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247 STGW40H65DFB
特徴
- IGBT Discretes, STMicroelectronics
仕様
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:80 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:283 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:15.75mm
- Width:5.15mm
- Height:20.15mm
- Dimensions:15.75 x 5.15 x 20.15mm
- Minimum Operating Temperature:-55 °C
- CODE No.:792-5795
アズワン品番 64-1257-86 Model No. STGW40H65DFB 標準価格 JPY: 1,500 USD: 9.41 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1bag(2pieces) Stock in Japan 
Supplier StockSupplier Stock"init"> 64-1257-86 STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247 STGW40H65DFB 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
STMicroelectronics 64-1257-86 STMicroelectronics STGW40H65DFB IGBT, 80 A 650 V, 3-Pin TO-247 STGW40H65DFB
特徴
- IGBT Discretes, STMicroelectronics
仕様
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:80 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:283 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:15.75mm
- Width:5.15mm
- Height:20.15mm
- Dimensions:15.75 x 5.15 x 20.15mm
- Minimum Operating Temperature:-55 °C
- CODE No.:792-5795
アズワン品番 64-1257-86 型番 STGW40H65DFB 標準価格 JPY: 1,500 USD: 9.41 Excange rate 1USD= 159.42JPY
Valid price in Japan入り数 1bag(2pieces) 在庫数
Supplier Stock
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