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STMicroelectronics

64-1257-65　STB18N60M2 N-Channel MOSFET, 13 A, 650 V MDmesh M2, 3-Pin D2PAK STMicroelectronics　STB18N60M2

Features

  • N-channel MDmesh™ M2 Series, STMicroelectronics. A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:13 A
  • Maximum Drain Source Voltage:650 V
  • Maximum Drain Source Resistance:280 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:110 W
  • Number of Elements per Chip:1
  • CODE No.:792-5707
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Order No. 64-1257-65
Model No. STB18N60M2
Standard price JPY: 2,760 USD: 17.30
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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