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• 64-1253-28 STP18N60M2 N-Channel MOSFET, 13 A, 650 V MDmesh M2, 3-Pin TO-220 STMicroelectronics　STP18N60M2

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• 64-1253-28 STP18N60M2 N-Channel MOSFET, 13 A, 650 V MDmesh M2, 3-Pin TO-220 STMicroelectronics　STP18N60M2

STMicroelectronics

64-1253-28　STP18N60M2 N-Channel MOSFET, 13 A, 650 V MDmesh M2, 3-Pin TO-220 STMicroelectronics　STP18N60M2

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• AXEL GLOBAL
• Categories
• Lab Instruments & Supplies
• Electronic/Electrical Parts and Controll Equipments
• Electronics Components, Power & Connectors
• Semiconductors
• Discrete Semiconductors
• 64-1253-28 STP18N60M2 N-Channel MOSFET, 13 A, 650 V MDmesh M2, 3-Pin TO-220 STMicroelectronics　STP18N60M2

• AXEL GLOBAL
• Categories
• Lab Instruments & Supplies
• Electronic/Electrical Parts and Controll Equipments
• RS Components
• 64-1253-28 STP18N60M2 N-Channel MOSFET, 13 A, 650 V MDmesh M2, 3-Pin TO-220 STMicroelectronics　STP18N60M2

STMicroelectronics

64-1253-28　STP18N60M2 N-Channel MOSFET, 13 A, 650 V MDmesh M2, 3-Pin TO-220 STMicroelectronics　STP18N60M2

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Features

• N-channel MDmesh™ M2 Series, STMicroelectronics. A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

Spec

• Quantity:1bag(5pieces)
• Channel Type:N
• Maximum Continuous Drain Current:13 A
• Maximum Drain Source Voltage:650 V
• Maximum Drain Source Resistance:280 mΩ
• Maximum Gate Threshold Voltage:4V
• Minimum Gate Threshold Voltage:2V
• Maximum Gate Source Voltage:-25 V, +25 V
• Package Type:TO-220
• Mounting Type:Through Hole
• Transistor Configuration:Single
• Channel Mode:Enhancement
• Category:Power MOSFET
• Maximum Power Dissipation:110 W
• Typical Input Capacitance @ Vds:791 pF @ 100 V
• CODE No.:791-7813
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Order No.	64-1253-28
Model No.	STP18N60M2
Standard price	JPY: 2,760 USD: 17.17 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1bag(5pieces)
Stock in Japan
Supplier Stock

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