64-0684-88 SiHG30N60E-GE3 N-Channel MOSFET, 29 A, 600 V E Series, 3-Pin TO-247AC Vishay SiHG30N60E-GE3
Features
- N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:29 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:125 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-247AC
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:250 W
- Series:E Series
- CODE No.:787-9421
| Order No. | 64-0684-88 | |
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| Model No. | SiHG30N60E-GE3 | |
| Standard price |
JPY: 1,520
USD: 9.53
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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