Vishay

64-0684-88 SiHG30N60E-GE3 N-Channel MOSFET, 29 A, 600 V E Series, 3-Pin TO-247AC Vishay SiHG30N60E-GE3

Features

  • N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor. The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:29 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:125 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-247AC
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:250 W
  • Series:E Series
  • CODE No.:787-9421
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Order No. 64-0684-88
Model No. SiHG30N60E-GE3
Standard price JPY: 1,520 USD: 9.53
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock