64-0684-84 SISA10DN-T1-GE3 N-Channel MOSFET, 30 A, 30 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISA10DN-T1-GE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:5 mΩ
- Minimum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:39 W
- Maximum Operating Temperature:+150 °C
- CODE No.:787-9409
| Order No. | 64-0684-84 | |
|---|---|---|
| Model No. | SISA10DN-T1-GE3 | |
| Standard price |
JPY: 1,910
USD: 11.88
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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