64-0684-82 SIS892ADN-T1-GE3 N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212 Vishay SIS892ADN-T1-GE3
Features
- N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:28 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:47 mΩ
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:52 W
- Number of Elements per Chip:1
- CODE No.:787-9399
| Order No. | 64-0684-82 | |
|---|---|---|
| Model No. | SIS892ADN-T1-GE3 | |
| Standard price |
JPY: 1,830
USD: 11.39
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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