64-0684-81 [Discontinued]SIS892ADN-T1-GE3 N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212 Vishay SIS892ADN-T1-GE3
Features
- N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:28 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:47 mΩ
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Maximum Power Dissipation:52 W
- Typical Gate Charge @ Vgs:12.8 nC @ 10 V
- CODE No.:165-6981
| Order No. | 64-0684-81 | |
|---|---|---|
| Model No. | SIS892ADN-T1-GE3 | |
| Standard price |
JPY: 301,000
USD: 1,886.79
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SIS892ADN-T1-GE3 N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212 Vishay SIS892ADN-T1-GE3](https://aimg.as-1.co.jp/c/64/0684/81/64068481.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)