64-0684-27 [Discontinued]SI9945BDY-T1-GE3 Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5.3 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:72 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Maximum Power Dissipation:3.1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:787-8995
| Order No. | 64-0684-27 | |
|---|---|---|
| Model No. | SI9945BDY-T1-GE3 | |
| Standard price |
JPY: 2,310
USD: 14.48
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI9945BDY-T1-GE3 Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3](https://aimg.as-1.co.jp/c/64/0684/27/64068427.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)