64-0663-19 ［Discontinued］Infineon IRGP30B120KD-EP IGBT, 60 A 1200 V, 3-Pin TO-247AD IRGP30B120KD-EP
Features
- Co-Pack IGBT over 21A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Spec
- Quantity:1piece
- Maximum Continuous Collector Current:60 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:300 W
- Package Type:TO-247AD
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:15.7mm
- Width:5.1mm
- Height:18.7mm
- Dimensions:15.7 x 5.1 x 18.7mm
- Minimum Operating Temperature:-55 °C
- CODE No.:784-0319
| Order No. | 64-0663-19 | |
|---|---|---|
| Model No. | IRGP30B120KD-EP | |
| Standard price |
JPY: 1,340
USD: 8.40
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |