64-0625-92 [Discontinued]ON Semiconductor NGTB25N120IHLWG IGBT, 50 A 1200 V, 3-Pin TO-247 NGTB25N120IHLWG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1piece
- Maximum Continuous Collector Current:50 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:192 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:16.26mm
- Width:5.3mm
- Height:21.08mm
- Dimensions:16.26 x 5.3 x 21.08mm
- Maximum Operating Temperature:+150 °C
- CODE No.:773-7383
| Order No. | 64-0625-92 | |
|---|---|---|
| Model No. | NGTB25N120IHLWG | |
| Standard price |
JPY: 330
USD: 2.07
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]ON Semiconductor NGTB25N120IHLWG IGBT, 50 A 1200 V, 3-Pin TO-247 NGTB25N120IHLWG](https://aimg.as-1.co.jp/c/64/0625/92/64062591.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)