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ON Semiconductor

64-0625-90　［Discontinued］ON Semiconductor NGTB15N60S1EG IGBT, 30 A 600 V, 3-Pin TO-220　NGTB15N60S1EG

Features

  • IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

Spec

  • Quantity:1set(50pieces)
  • Maximum Continuous Collector Current:30 A
  • Maximum Collector Emitter Voltage:600 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:117 W
  • Package Type:TO-220
  • Mounting Type:Through Hole
  • Channel Type:N
  • Pin Count:3
  • Transistor Configuration:Single
  • Length:10.28mm
  • Width:4.82mm
  • Height:15.75mm
  • Dimensions:10.28 x 4.82 x 15.75mm
  • Maximum Operating Temperature:+150 °C
  • CODE No.:145-3518
  •  
Order No. 64-0625-90
Model No. NGTB15N60S1EG
Standard price JPY: 8,520 USD: 53.41
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(50pieces)
  Discontinued
Stock in Japan -

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