64-0625-89 [Discontinued]ON Semiconductor NGTB15N60EG IGBT, 30 A 600 V, 3-Pin TO-220 NGTB15N60EG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1set(50pieces)
- Maximum Continuous Collector Current:30 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:117 W
- Package Type:TO-220
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:10.28mm
- Width:4.82mm
- Height:15.75mm
- Dimensions:10.28 x 4.82 x 15.75mm
- Minimum Operating Temperature:-55 °C
- CODE No.:145-3119
| Order No. | 64-0625-89 | |
|---|---|---|
| Model No. | NGTB15N60EG | |
| Standard price |
JPY: 5,330
USD: 33.16
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]ON Semiconductor NGTB15N60EG IGBT, 30 A 600 V, 3-Pin TO-220 NGTB15N60EG](https://aimg.as-1.co.jp/c/64/0625/89/64062589.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)