64-0622-05 [Discontinued]FDD4N60NZ N-Channel MOSFET, 3.4 A, 600 V UniFET, 3-Pin DPAK ON Semiconductor FDD4N60NZ
Features
- UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.4 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:2.5 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:114 W
- Width:6.22mm
- CODE No.:166-2826
| Order No. | 64-0622-05 | |
|---|---|---|
| Model No. | FDD4N60NZ | |
| Standard price |
JPY: 121,100
USD: 759.11
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDD4N60NZ N-Channel MOSFET, 3.4 A, 600 V UniFET, 3-Pin DPAK ON Semiconductor FDD4N60NZ](https://aimg.as-1.co.jp/c/64/0622/05/64062205.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)