Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
Quantity:1bag(100pieces)
Channel Type:N
Maximum Continuous Drain Current:220 mA
Maximum Drain Source Voltage:50 V
Maximum Drain Source Resistance:2.5 Ω
Minimum Gate Threshold Voltage:0.6V
Maximum Gate Source Voltage:-12 V, +12 V
Package Type:SOT-23
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:350 mW
Number of Elements per Chip:1
CODE No.:761-4401
Order No.Order No.ss="init">
64-0554-36 BSS138K N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 ON Semiconductor BSS138K 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
