64-0553-75 RFD14N05SM9A N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK ON Semiconductor RFD14N05SM9A
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:14 A
- Maximum Drain Source Voltage:50 V
- Maximum Drain Source Resistance:100 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:48 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-2657
| Order No. | 64-0553-75 | |
|---|---|---|
| Model No. | RFD14N05SM9A | |
| Standard price |
JPY: 212,000
USD: 1,328.90
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|