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64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW

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  • 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW

FeaturesFeatures class="init"> 64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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  • 64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW
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  • 64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW
ON Semiconductor

64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW

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  • 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW

特徴

  • Enhancement Mode Dual MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1bag(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:115 mA
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:13.5 Ω
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-363 (SC-70)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:200 mW
  • Minimum Operating Temperature:-55 °C
  • CODE No.:761-3571
  •  
Order No. 64-0553-30
Model No. 2N7002DW
Standard priceStandard pricess="init"> 64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
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Contact us
すべてのカテゴリ
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Quote Other Requests
  • AXEL GLOBAL
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  • Electronics Components, Power & Connectors
  • Semiconductors
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  • 64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW
  • AXEL GLOBAL
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  • 64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW
ON Semiconductor

64-0553-30 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW

  • 印刷
  • PDF
  • 2N7002DW Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor 2N7002DW

特徴

  • Enhancement Mode Dual MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

仕様

  • Quantity:1bag(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:115 mA
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:13.5 Ω
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-363 (SC-70)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:200 mW
  • Minimum Operating Temperature:-55 °C
  • CODE No.:761-3571
  •  
アズワン品番 64-0553-30
型番 2N7002DW
標準価格 JPY: 2,590 USD: 16.25
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1bag(50pieces)
在庫数
Supplier Stock

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