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ON Semiconductor

64-0553-28　RFD14N05LSM9A N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK ON Semiconductor　RFD14N05LSM9A

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1bag(10pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:14 A
  • Maximum Drain Source Voltage:50 V
  • Maximum Drain Source Resistance:100 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-10 V, +10 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:48 W
  • Typical Input Capacitance @ Vds:670 pF@ 25 V
  • CODE No.:761-3565
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Order No. 64-0553-28
Model No. RFD14N05LSM9A
Standard price JPY: 1,330 USD: 8.28
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(10pieces)
Stock in Japan
Supplier Stock

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