64-0552-28 ［Discontinued］STB23NM60ND N-Channel MOSFET, 19.5 A, 600 V FDmesh, 3-Pin D2PAK STMicroelectronics STB23NM60ND
Features
- N-Channel FDmesh™ Power MOSFET, STMicroelectronics
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:19.5 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:180 mΩ
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Dimensions:10.75 x 10.4 x 4.6mm
- CODE No.:761-0667
| Order No. | 64-0552-28 | |
|---|---|---|
| Model No. | STB23NM60ND | |
| Standard price |
JPY: 490
USD: 3.05
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |