64-0550-87 ［Discontinued］STB26NM60N N-Channel MOSFET, 20 A, 600 V MDmesh, 3-Pin D2PAK STMicroelectronics STB26NM60N
Features
- N-Channel MDmesh™, 600V/650V, STMicroelectronics
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:20 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:165 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:140 W
- Typical Gate Charge @ Vgs:60 nC @ 10 V
- CODE No.:760-9503
| Order No. | 64-0550-87 | |
|---|---|---|
| Model No. | STB26NM60N | |
| Standard price |
JPY: 730
USD: 4.54
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
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| Stock in Japan | - | |