64-0546-34 FDMS2672 N-Channel MOSFET, 20 A, 200 V UltraFET, 8-Pin Power 56 ON Semiconductor FDMS2672
Features
- UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:20 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:156 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:Power 56
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:78 W
- Typical Gate Charge @ Vgs:30 nC @ 10 V
- CODE No.:759-9594
| Order No. | 64-0546-34 | |
|---|---|---|
| Model No. | FDMS2672 | |
| Standard price |
JPY: 640
USD: 3.98
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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