ON Semiconductor

64-0545-43　FDD306P P-Channel MOSFET, 6.7 A, 12 V PowerTrench, 3-Pin DPAK ON Semiconductor　FDD306P

印刷

特徴

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

仕様

Quantity:1set(2500pieces)
Channel Type:P
Maximum Continuous Drain Current:6.7 A
Maximum Drain Source Voltage:12 V
Maximum Drain Source Resistance:90 mΩ
Minimum Gate Threshold Voltage:0.4V
Maximum Gate Source Voltage:-8 V, +8 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:52 W
Minimum Operating Temperature:-55 °C
CODE No.:166-2398

アズワン品番 64-0545-43

Model No. FDD306P

標準価格

JPY: 237,000 USD: 1,485.61

Excange rate 1USD= 159.53JPY
Valid price in Japan

QuantityQuantityass="init"> 64-0545-43 FDD306P P-Channel MOSFET, 6.7 A, 12 V PowerTrench, 3-Pin DPAK ON Semiconductor　FDD306P 【AXEL GLOBAL】 アズワン

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ON Semiconductor

64-0545-43　FDD306P P-Channel MOSFET, 6.7 A, 12 V PowerTrench, 3-Pin DPAK ON Semiconductor　FDD306P

印刷

特徴

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

仕様

Quantity:1set(2500pieces)
Channel Type:P
Maximum Continuous Drain Current:6.7 A
Maximum Drain Source Voltage:12 V
Maximum Drain Source Resistance:90 mΩ
Minimum Gate Threshold Voltage:0.4V
Maximum Gate Source Voltage:-8 V, +8 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:52 W
Minimum Operating Temperature:-55 °C
CODE No.:166-2398

アズワン品番	64-0545-43
型番	FDD306P
標準価格	JPY: 237,000 USD: 1,485.61 Excange rate 1USD= 159.53JPY Valid price in Japan
入り数	1set(2500pieces)
Stock in Japan
Supplier Stock

This page is the page of FDD306P P-Channel MOSFET, 6.7 A, 12 V PowerTrench, 3-Pin DPAK ON Semiconductor sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

64-0545-43　FDD306P P-Channel MOSFET, 6.7 A, 12 V PowerTrench, 3-Pin DPAK ON Semiconductor　FDD306P

Features

Spec

64-0545-43　FDD306P P-Channel MOSFET, 6.7 A, 12 V PowerTrench, 3-Pin DPAK ON Semiconductor　FDD306P

特徴

仕様

64-0545-43　FDD306P P-Channel MOSFET, 6.7 A, 12 V PowerTrench, 3-Pin DPAK ON Semiconductor　FDD306P

特徴

仕様