64-0545-32 [Discontinued]FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:52 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:49 mΩ
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:357 W
- Length:9.98mm
- CODE No.:759-8983
| Order No. | 64-0545-32 | |
|---|---|---|
| Model No. | FDB52N20TM | |
| Standard price |
JPY: 2,640
USD: 16.55
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM](https://aimg.as-1.co.jp/c/64/0545/32/64054531.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)