Listed products : 3 milion productsListed products : 3 milion products"init">
［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM 64-0545-32 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM 64-0545-32 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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64-0545-32 ［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM
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［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM 64-0545-32 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
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64-0545-32 ［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM
AXEL GLOBAL
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RS Components
64-0545-32 ［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM
ON Semiconductor
64-0545-32 ［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM
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［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM 64-0545-32 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
取扱点数300万点
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English
China
Indonesia
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すべてのカテゴリ
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Lab Instruments & Supplies
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AXEL GLOBAL
カテゴリ一覧
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Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
64-0545-32 ［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
64-0545-32 ［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM
ON Semiconductor
64-0545-32 ［Discontinued］FDB52N20TM N-Channel MOSFET, 52 A, 200 V UniFET, 3-Pin D2PAK ON Semiconductor FDB52N20TM
印刷
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Features
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
Quantity:1bag(5pieces)
Channel Type:N
Maximum Continuous Drain Current:52 A
Maximum Drain Source Voltage:200 V
Maximum Drain Source Resistance:49 mΩ
Minimum Gate Threshold Voltage:3V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:D2PAK (TO-263)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:357 W
Length:9.98mm
CODE No.:759-8983
Order No.
64-0545-32
Model No.
FDB52N20TM
Standard price
JPY:
2,640
USD:
16.43
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1bag(5pieces)
Stock in Japan
-
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